论文信息 - Simulations of hardened components and circuits

Simulations of hardened components and circuits

Physical simulation of single, hardened transistors is an essential step towards a thorough understanding of the underlying basic phenomena of components under irradiation. Results gathered from this physical, microscopic simulation, should be confirmed by measurements on actual components. This procedure leads to an analytical, macroscopic transistor modelling, well suited to the electrical simulation of complex integrated circuits, including thousands of elementary components, operating both under the radiative and non-radiative environments.

Patrick Siarry | Gerard Berthiau | V. Ferlet-Cavrois | J. Haussy | François Durbin

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