论文信息 - Realization of semiconductor device synthesis with the parallel genetic algorithm

Realization of semiconductor device synthesis with the parallel genetic algorithm

In this presented paper, to accomplish semiconductor device synthesis for TCAD application, the Parallel Genetic Algorithm is applied as the core searching algorithm for "acceptability region" of device designables, which satisfy the designed device performance. The results of some experiments on FIBMOS are shown, which indicate the Parallel Genetic Algorithm is an efficient and fast searching algorithm to fulfill device synthesis. Some potential problems related to device synthesis are also discussed.

Wenjun Zhang | Xiao-Feng Xie | Zhao Li | Zhilian Yang

[1] M. Stockingera,et al. Drive performance of an asymmetric MOSFET structure : the peak device , 1999 .

[2] Michael de la Maza,et al. Book review: Genetic Algorithms + Data Structures = Evolution Programs by Zbigniew Michalewicz (Springer-Verlag, 1992) , 1993 .

[3] Joachim Stender,et al. Parallel Genetic Algorithms: Theory and Applications , 1993 .

[4] P.K. Mozumder,et al. An application of process synthesis methodology for first-pass fabrication success of high-performance deep-submicron CMOS , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[5] Yang,et al. Realization of Device Decomposition for Technology Synthesis with the Genetic Algorithm , 2002 .

[6] H. H. Hosack,et al. Recent advances in process synthesis for semiconductor devices , 1998 .

[7] Zbigniew Michalewicz,et al. Genetic Algorithms Plus Data Structures Equals Evolution Programs , 1994 .

[8] James E. Murguia,et al. Use of focused-ion-beam and modeling to optimize submicron MOSFET characteristics , 1998 .

[9] Zbigniew Michalewicz,et al. Genetic Algorithms + Data Structures = Evolution Programs , 1996, Springer Berlin Heidelberg.